rsf014n03 transistors rev.b 1/4 4v drive nch mosfet rsf014n03 z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) space saving , small surface mount package (tumt3). 3) 4v drive. z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) rsf014n03 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 150 ? 55 to + 150 20 1.4 5.6 0.6 5.6 0.8 z thermal resistance parameter c/w rth(ch-a) symbol limits unit channel to ambient 156 ? mounted on a ceramic board ? (1) gate (2) source (3) drain ? 2 ? 1 esd protection diode ? 2 body diode ? 1 (2) (1) (3) (1) gate (2) source (3) drain tumt3 abbreviated symbol : pn 0.2max.
rsf014n03 transistors rev.b 2/4 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs =20v, v ds =0v v dd 15v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 170 240 i d = 1.4a, v gs = 10v ? 250 350 m ? m ? m ? i d = 1.4a, v gs = 4.5v ? 270 380 i d = 1.4a, v gs = 4v 1 ?? sv ds = 10v, i d = 1.4a ? 70 ? pf v ds = 10v ? 15 12 ? pf v gs =0v ? 6 ? pf f=1mhz ? 6 ? ns ? 13 ? ns ? 8 ? ns ? 1.4 ? ns ? 0.6 2.0 nc ? 0.3 ? nc v gs = 5v ?? nc i d = 1.4a v dd 15 v i d = 0.7a v gs = 10v r l =21 ? r g =10 ? r l =11 ? r g =10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 0.6a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions
rsf014n03 transistors rev.b 3/4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gate-source voltage : v gs (v) 0.001 1 0.1 0.01 drain current : i d (a) 10 fig.4 typical transfer characteristics v ds = 10v pulsed ta = 125 c ta = 75 c ta = 25 c ta = ? 25 c 02 4 6 810 gate source voltage : v gs (v) 0 300 200 100 static drain-source on-state resistance : r ds (on) (m ? ) 1000 900 800 700 600 500 400 fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d =1.4a i d =0.7a 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.1 0.01 1 10 source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c z electrical characteristics curves 0.01 0.1 1 10 100 drain-source voltage : v ds (v) 1 100 10 capacitance : c (pf) 1000 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 10 drain current : i d (a) 1 10 100 switching time : t (ns) 1000 fig.2 switching characteristics ta = 25 c v dd = 15v v gs = 10v r g = 10 ? pulsed t r t f t d (off) t d (on) 0123 total gate charge : qg (nc) 0 3 2 1 gate source voltage : v gs (v) 10 9 8 7 6 5 4 fig.3 dynamic input characteristics ta = 25 c v dd = 15v i d = 1.4a r g = 10 ? pulsed 0.01 0.1 1 10 drain current : i d (a) 10000 1000 100 10 static drain- source on-state resistance : r ds (on) (m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 drain current : i d (a) 10000 1000 100 10 static drain- source on-state resistance : r ds (on) (m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs = 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 drain current : i d (a) 10000 1000 100 10 static drain- source on-state resistance : r ds (om) (m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs = 4v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
rsf014n03 transistors rev.b 4/4 0.1 1 10 drain current : i d (a) 1000 100 static drain- source on-state resistance : r ds (on) (m ? ) fig.10 static drain-source on-state resistance vs. drain current ( ) ta = 25 c pulsed v gs =10v v gs =4.5v v gs =4v
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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